31.080 - Semiconductor devices
ICS 31.080 Details
Semiconductor devices
Halbleiterbauelemente
Dispositifs a semi-conducteurs
Polprevodniški elementi
General Information
Frequently Asked Questions
ICS 31.080 is a classification code in the International Classification for Standards (ICS) system. It covers "Semiconductor devices". The ICS is a hierarchical classification system used to organize international, regional, and national standards, facilitating the search and identification of standards across different fields.
There are 1108 standards classified under ICS 31.080 (Semiconductor devices). These standards are published by international and regional standardization bodies including ISO, IEC, CEN, CENELEC, and ETSI.
The International Classification for Standards (ICS) is a hierarchical classification system maintained by ISO to organize standards and related documents. It uses a three-level structure with field (2 digits), group (3 digits), and sub-group (2 digits) codes. The ICS helps users find standards by subject area and enables statistical analysis of standards development activities.
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IEC 60747-16-11:2026 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit power detectors.
- Standard36 pagesEnglish languagesale 15% off
IEC 63378-6:2026 specifies a thermal resistance and capacitance model for semiconductor packages. This model is named the digital transformation using thermal resistance and capacitance (DXRC) model. It predicts transient temperature at junction and measurement points.
This document applies to semiconductor packages such as TO-252, TO-263, and HSOP. It supports single chip packages dissipated heat from single package surface.
- Standard31 pagesEnglish languagee-Library read for1 day
IEC 63378-6:2026 specifies a thermal resistance and capacitance model for semiconductor packages. This model is named the digital transformation using thermal resistance and capacitance (DXRC) model. It predicts transient temperature at junction and measurement points. This document applies to semiconductor packages such as TO-252, TO-263, and HSOP. It supports single chip packages dissipated heat from single package surface.
- Standard31 pagesEnglish languagee-Library read for1 day
IEC 60749-20-1:2019 applies to all devices subjected to bulk solder reflow processes during PCB assembly, including plastic encapsulated packages, process sensitive devices, and other moisture-sensitive devices made with moisture-permeable materials (epoxies, silicones, etc.) that are exposed to the ambient air. The purpose of this document is to provide SMD manufacturers and users with standardized methods for handling, packing, shipping, and use of moisture/reflow sensitive SMDs that have been classified to the levels defined in IEC 60749-20. These methods are provided to avoid damage from moisture absorption and exposure to solder reflow temperatures that can result in yield and reliability degradation. By using these procedures, safe and damage-free reflow can be achieved, with the dry packing process, providing a minimum shelf life capability in sealed dry-bags from the seal date. This edition includes the following significant technical changes with respect to the previous edition: - updates to subclauses to better align the test method with IPC/JEDEC J-STD-033C, including new sections on aqueous cleaning and dry pack precautions; - addition of two annexes on colorimetric testing of HIC (humidity indicator card) and derivation of bake tables.
- Standard42 pagesEnglish languagee-Library read for1 day
IEC 60749-26:2025 establishes the procedure for testing, evaluating, and classifying components and microcircuits in accordance with their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The purpose of this document is to establish a test method that will replicate HBM failures and provide reliable, repeatable HBM ESD test results from tester to tester, regardless of component type. Repeatable data will allow accurate classifications and comparisons of HBM ESD sensitivity levels. ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC 60749‑27) or other ESD test methods in the IEC 60749 series. Unless otherwise specified, this test method is the one selected.
This edition includes the following significant technical changes with respect to the previous edition:
a) new definitions have been added;
b) text has been added to clarify the designation of and allowances resulting from “low parasitics”. The new designation includes the maximum number of pins of a device that can pass the test procedure.
- Standard53 pagesEnglish languagee-Library read for1 day
IEC 62047-52:2026 specifies a testing method for measuring device performance and failure strain under biaxial tensile deformation in stretchable MEMS materials. The typical examples of the stretchable MEMS materials are flexible single crystalline silicon structures, MEMS circuit boards, interconnected MEMS on a stretchable substrate. The test piece has a cruciform geometry and the test piece thickness ranges from 1 μm to 100 μm with the same thickness as the actual devices. Since the failure strain can vary depending on loading conditions like uniaxial tension and equi-biaxial tension, a biaxial load is applied to a cruciform test piece with varying strain ratio between two perpendicular loading directions.
- Standard12 pagesEnglish languagesale 15% off
IEC 60749-20-1:2019 applies to all devices subjected to bulk solder reflow processes during PCB assembly, including plastic encapsulated packages, process sensitive devices, and other moisture-sensitive devices made with moisture-permeable materials (epoxies, silicones, etc.) that are exposed to the ambient air. The purpose of this document is to provide SMD manufacturers and users with standardized methods for handling, packing, shipping, and use of moisture/reflow sensitive SMDs that have been classified to the levels defined in IEC 60749-20. These methods are provided to avoid damage from moisture absorption and exposure to solder reflow temperatures that can result in yield and reliability degradation. By using these procedures, safe and damage-free reflow can be achieved, with the dry packing process, providing a minimum shelf life capability in sealed dry-bags from the seal date. This edition includes the following significant technical changes with respect to the previous edition: - updates to subclauses to better align the test method with IPC/JEDEC J-STD-033C, including new sections on aqueous cleaning and dry pack precautions; - addition of two annexes on colorimetric testing of HIC (humidity indicator card) and derivation of bake tables.
- Standard42 pagesEnglish languagee-Library read for1 day
IEC 62031:2026 specifies safety requirements for LED modules for operation on DC supplies up to 1 500 V or on AC supplies up to 1 000 V. This document does not include requirements for performance characteristics of LED modules.
This document does not apply to:
- LED packages;
- LED modules for automotive lighting;
- OLED modules;
- LED lamps.
This third edition cancels and replaces the second edition published in 2018. This edition constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous edition:
a) Complete review of the document structure, detailed technical requirements and tests, including but not limited to what is individually described under items b) to i);
b) Clarification of the scope and revision of the applicability of this document to independent and integral LED modules;
c) Updated terms and definitions;
d) Clearer specification for clause general requirements and clause general test requirements;
e) Update of the marking clause, such as marking of control terminals;
f) A full review and update of the electrical safety, thermal safety, and mechanical safety requirements preventing misinterpretation and ambiguity;
g) Updated photobiological safety requirements;
h) Revised and updated fault conditions and abnormal conditions requirements;
i) Removal of the annex relating to conformity testing during manufacture.
- Standard46 pagesEnglish languagesale 15% off
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IEC 60749-26:2025 establishes the procedure for testing, evaluating, and classifying components and microcircuits in accordance with their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The purpose of this document is to establish a test method that will replicate HBM failures and provide reliable, repeatable HBM ESD test results from tester to tester, regardless of component type. Repeatable data will allow accurate classifications and comparisons of HBM ESD sensitivity levels. ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC 60749‑27) or other ESD test methods in the IEC 60749 series. Unless otherwise specified, this test method is the one selected. This edition includes the following significant technical changes with respect to the previous edition: a) new definitions have been added; b) text has been added to clarify the designation of and allowances resulting from “low parasitics”. The new designation includes the maximum number of pins of a device that can pass the test procedure.
- Standard53 pagesEnglish languagee-Library read for1 day
IEC 60749-23:2025 specifies the test used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", can be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this document.
This edition includes the following significant technical changes with respect to the previous edition:
a) absolute stress test definitions and resultant test durations have been updated.
- Standard12 pagesEnglish languagee-Library read for1 day
IEC 60749-21:2025 establishes a standard procedure for determining the solderability of device package terminations that are intended to be joined to another surface using tin-lead (SnPb) or lead-free (Pb-free) solder for the attachment. This test method provides a procedure for “dip and look” solderability testing of through hole, axial and surface mount devices (SMDs) as well as an optional procedure for a board mounting solderability test for SMDs for the purpose of allowing simulation of the soldering process to be used in the device application. The test method also provides optional conditions for ageing. This test is considered destructive unless otherwise detailed in the relevant specification.
NOTE 1 This test method does not assess the effect of thermal stresses which can occur during the soldering process. More details can be found in IEC 60749‑15 or IEC 60749‑20.
NOTE 2 If a qualitative test method is preferred, the Wetting balance test method can be found in IEC 60068-2-69.
This edition includes the following significant technical changes with respect to the previous edition:
- revision to certain operating conditions in line with current working practices.
- Standard24 pagesEnglish languagee-Library read for1 day
IEC 63602:2026 specifies how to correctly display essential parameters of SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS devices as well. In contrast to silicon power MOSFETs certain aspects of SiC power MOSFETs require a dedicated approach in order to represent device parameters correctly in the datasheet. Details are explained in the following paragraphs, among others the most important topics are:
- substantially higher switching speeds ad high VDS;
- strong impact of test setup (see Clause 5);
- impact of body diode as a function of the applied negative gate bias ant the limitations arising for the VG(off) values depending on the actual device.
This document does not define device failure criteria, acceptable use conditions or acceptable lifetime targets. That is up to the device manufacturers and users. However, it provides stress procedures such that the threshold voltage stability over time as affected by gate bias and temperature can be demonstrated and evaluated.
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IEC 60749-22-2:2025 establishes a means for determining the strength of a ball bond to a die or package bonding surface and can be performed on pre-encapsulation or post-encapsulation devices. This measure of bond strength is extremely important in determining two features:
a) the integrity of the metallurgical bond which has been formed, and
b) the quality of ball bonds to die or package bonding surfaces.
This test method covers thermosonic (ball) bonds made with small diameter wire from 15 µm to 76 µm (0,000 6" to 0,003").
This test method can only be used when the bonds are large enough to allow for proper contact with the shear test chisel and when there are no adjacent interfering structures that would hinder the movement of the chisel. For consistent shear results the ball height will be at least 4,0 µm (0,000 6 ") for ball bonds, which is the current state of the art for bond shear test equipment at the time of this revision.
This test method can also be used on ball bonds that have had their wire removed and on to which a second bond wire (typically a stitch bond) is placed. This is known as "stitch on ball" and "reverse bonding". See Annex A for additional information.
The wire bond shear test is destructive. It is appropriate for use in process development, process control, or quality assurance, or both.
This test method can be used on ultrasonic (wedge) bonds, however its use has not been shown to be a consistent indicator of bond integrity. See Annex B for information on performing shear testing on wedge bonds.
This test method does not include bond strength testing using wire bond pull testing. Wire bond pull testing is described in IEC 60749-22-1.
This first edition, together with the first edition of IEC 60749-22-1, cancels and replaces the first edition IEC 60749-22 published in 2002. This International Standard is to be used in conjunction with IEC 60749-22-1:2025.
This edition includes the following significant technical changes with respect to the previous edition:
a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749‑22‑1).
- Standard38 pagesEnglish languagee-Library read for1 day
IEC 60749-24:2025 specifies unbiased highly accelerated stress testing (HAST). HAST is performed for the purpose of evaluating the reliability of non-hermetically packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under non-condensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it. Bias is not applied in this test to ensure that the failure mechanisms potentially overshadowed by bias can be uncovered (e.g. galvanic corrosion).
This test is used to identify failure mechanisms internal to the package and is destructive.
This edition includes the following significant technical changes with respect to the previous edition:
a) rearrangement of clauses to reposition requirements;
b) addition of two notes to the post-test electrical procedures.
- Standard13 pagesEnglish languagee-Library read for1 day
IEC 63378-6:2026 specifies a thermal resistance and capacitance model for semiconductor packages. This model is named the digital transformation using thermal resistance and capacitance (DXRC) model. It predicts transient temperature at junction and measurement points.
This document applies to semiconductor packages such as TO-252, TO-263, and HSOP. It supports single chip packages dissipated heat from single package surface.
- Standard28 pagesEnglish languagesale 15% off
- Standard29 pagesFrench languagesale 15% off
- Standard57 pagesEnglish and French languagesale 15% off
IEC 63601:2026 covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS (N-type MOS) devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS (P-type MOS) devices as well.
This document does not define device failure criteria, acceptable use conditions or acceptable lifetime targets. That is up to the device manufacturers and users. However, it provides stress procedures such that the threshold voltage stability over time as affected by gate bias and temperature can be demonstrated and evaluated.
- Standard44 pagesEnglish languagesale 15% off
IEC 60749-23:2025 specifies the test used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", can be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this document. This edition includes the following significant technical changes with respect to the previous edition: a) absolute stress test definitions and resultant test durations have been updated.
- Standard12 pagesEnglish languagee-Library read for1 day
IEC 60749-21:2025 establishes a standard procedure for determining the solderability of device package terminations that are intended to be joined to another surface using tin-lead (SnPb) or lead-free (Pb-free) solder for the attachment. This test method provides a procedure for “dip and look” solderability testing of through hole, axial and surface mount devices (SMDs) as well as an optional procedure for a board mounting solderability test for SMDs for the purpose of allowing simulation of the soldering process to be used in the device application. The test method also provides optional conditions for ageing. This test is considered destructive unless otherwise detailed in the relevant specification. NOTE 1 This test method does not assess the effect of thermal stresses which can occur during the soldering process. More details can be found in IEC 60749‑15 or IEC 60749‑20. NOTE 2 If a qualitative test method is preferred, the Wetting balance test method can be found in IEC 60068-2-69. This edition includes the following significant technical changes with respect to the previous edition: - revision to certain operating conditions in line with current working practices.
- Standard24 pagesEnglish languagee-Library read for1 day
IEC 60749-7:2025 specifies the testing and measurement of water vapour and other gas content of the atmosphere inside a metal or ceramic hermetically sealed device. The test is used as a measure of the quality of the sealing process and to provide information about the long-term chemical stability of the atmosphere inside the package. It is applicable to semiconductor devices sealed in such a manner but generally only used for high reliability applications such as military or aerospace.
Of particular interest is the measurement of the primary sealing gases (or lack thereof), the moisture content, the presence of bombing gases that are indicative of non-hermeticity (e.g. helium), oxygen to argon ratio indicative of room air ~ 20 to 1 (± 10 %), dissimilar concentration of internally sealed gases (e.g. nitrogen, helium) than originally sealed in the device package, the presence of leak test fluid (i.e. fluorocarbon, helium, air), and all other gases to determine if the device meets the specified moisture, hermeticity and other criteria. Also of interest is the measurement of all the other gases since they reflect upon the quality of the sealing process and provide information about the long-term chemical stability of the atmosphere inside the device. The presence of leak test fluorocarbon vapour in the internal gas analysis (IGA) is an indication of failure to meet leak test requirements of IEC 60749‑8.
This test is destructive.
This edition includes the following significant technical changes with respect to the previous edition:
a) This document has been re-written and rearranged to align with the text of MIL-STD-883, Method 1018.10.
b) Additional detail has been provided in the calibration requirements.
- Standard16 pagesEnglish languagee-Library read for1 day
IEC 60749-22-1:2025 provides a means for determining the strength and failure mode of a wire bonded to, and the corresponding interconnects on, a die or package bonding surface and can be performed on unencapsulated or decapsulated devices. This test method can be performed on gold alloy, copper alloy, and silver alloy thermosonic (ball and stitch) bonds made of wire ranging in diameter from 15 µm to 76 µm (0,000 6" to 0,003"); and on gold alloy, copper alloy, and aluminium alloy ultrasonic (wedge) bonds made of wire ranging in diameter from 18 µm to 600 µm (0,000 7" to 0,024").
This wire bond pull test method is destructive. It is appropriate for use in process development, process control, or quality assurance.
This test method allows for two distinct methods of pulling wires:
a) One method incorporates the use of a hook that is placed under the wire and is then pulled.
b) One method requires that after the wire be cut, a clamp is placed on the wire connected to the bond to be tested, and this clamp is used to pull the wire.
This test method does not include bond strength testing using wire bond shear testing. Wire bond shear testing is described in IEC 60749-22-2.
This first edition, together with the first edition of IEC 60749-22-2:2025, cancels and replaces the first edition of IEC 60749-22 published in 2002.
This edition includes the following significant technical changes with respect to the previous edition:
a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749-22-2).
This International Standard is to be used in conjunction with IEC 60749-22-2:2025.
- Standard65 pagesEnglish languagee-Library read for1 day
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IEC 60747-5-13:2021 provides the accelerated test method to assess effects of the tarnishing of silver and silver alloys used for LED packages due to hydrogen sulphide. Particularly, this test method is intended to give information on silver and silver alloy tarnishing effects to the luminous/radiant flux maintenance of LED packages. Additionally, this test method can give information on electric performances of LED packages due to corrosion of silver and silver alloys. The object of this test is to determine the influence of atmospheres containing hydrogen sulphide on parts of LED packages made of: silver or silver alloy; silver or silver alloy protected with another layer; other metals covered with silver or silver alloy. Testing other degradations that are susceptible to affect luminous/radiant flux maintenance and/or electric performance (e.g. degradation of copper or silicone parts) is not the object of this test. This test might not be suitable as a general corrosion test, i.e. it might not predict the behaviour of flux and/or electric characteristics and connections in industrial atmospheres. This document is applicable to LED packages for lighting applications only if referenced by an IEC SC 34A document.
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IEC 60749-24:2025 specifies unbiased highly accelerated stress testing (HAST). HAST is performed for the purpose of evaluating the reliability of non-hermetically packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under non-condensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it. Bias is not applied in this test to ensure that the failure mechanisms potentially overshadowed by bias can be uncovered (e.g. galvanic corrosion). This test is used to identify failure mechanisms internal to the package and is destructive. This edition includes the following significant technical changes with respect to the previous edition: a) rearrangement of clauses to reposition requirements; b) addition of two notes to the post-test electrical procedures.
- Standard13 pagesEnglish languagee-Library read for1 day
IEC 60749-7:2025 specifies the testing and measurement of water vapour and other gas content of the atmosphere inside a metal or ceramic hermetically sealed device. The test is used as a measure of the quality of the sealing process and to provide information about the long-term chemical stability of the atmosphere inside the package. It is applicable to semiconductor devices sealed in such a manner but generally only used for high reliability applications such as military or aerospace. Of particular interest is the measurement of the primary sealing gases (or lack thereof), the moisture content, the presence of bombing gases that are indicative of non-hermeticity (e.g. helium), oxygen to argon ratio indicative of room air ~ 20 to 1 (± 10 %), dissimilar concentration of internally sealed gases (e.g. nitrogen, helium) than originally sealed in the device package, the presence of leak test fluid (i.e. fluorocarbon, helium, air), and all other gases to determine if the device meets the specified moisture, hermeticity and other criteria. Also of interest is the measurement of all the other gases since they reflect upon the quality of the sealing process and provide information about the long-term chemical stability of the atmosphere inside the device. The presence of leak test fluorocarbon vapour in the internal gas analysis (IGA) is an indication of failure to meet leak test requirements of IEC 60749‑8. This test is destructive. This edition includes the following significant technical changes with respect to the previous edition: a) This document has been re-written and rearranged to align with the text of MIL-STD-883, Method 1018.10. b) Additional detail has been provided in the calibration requirements.
- Standard16 pagesEnglish languagee-Library read for1 day
IEC 60749-22-1:2025 provides a means for determining the strength and failure mode of a wire bonded to, and the corresponding interconnects on, a die or package bonding surface and can be performed on unencapsulated or decapsulated devices. This test method can be performed on gold alloy, copper alloy, and silver alloy thermosonic (ball and stitch) bonds made of wire ranging in diameter from 15 µm to 76 µm (0,000 6" to 0,003"); and on gold alloy, copper alloy, and aluminium alloy ultrasonic (wedge) bonds made of wire ranging in diameter from 18 µm to 600 µm (0,000 7" to 0,024"). This wire bond pull test method is destructive. It is appropriate for use in process development, process control, or quality assurance. This test method allows for two distinct methods of pulling wires: a) One method incorporates the use of a hook that is placed under the wire and is then pulled. b) One method requires that after the wire be cut, a clamp is placed on the wire connected to the bond to be tested, and this clamp is used to pull the wire. This test method does not include bond strength testing using wire bond shear testing. Wire bond shear testing is described in IEC 60749-22-2. This first edition, together with the first edition of IEC 60749-22-2:2025, cancels and replaces the first edition of IEC 60749-22 published in 2002. This edition includes the following significant technical changes with respect to the previous edition: a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749-22-2). This International Standard is to be used in conjunction with IEC 60749-22-2:2025.
- Standard65 pagesEnglish languagee-Library read for1 day
IEC 60749-22-2:2025 establishes a means for determining the strength of a ball bond to a die or package bonding surface and can be performed on pre-encapsulation or post-encapsulation devices. This measure of bond strength is extremely important in determining two features: a) the integrity of the metallurgical bond which has been formed, and b) the quality of ball bonds to die or package bonding surfaces. This test method covers thermosonic (ball) bonds made with small diameter wire from 15 µm to 76 µm (0,000 6" to 0,003"). This test method can only be used when the bonds are large enough to allow for proper contact with the shear test chisel and when there are no adjacent interfering structures that would hinder the movement of the chisel. For consistent shear results the ball height will be at least 4,0 µm (0,000 6 ") for ball bonds, which is the current state of the art for bond shear test equipment at the time of this revision. This test method can also be used on ball bonds that have had their wire removed and on to which a second bond wire (typically a stitch bond) is placed. This is known as "stitch on ball" and "reverse bonding". See Annex A for additional information. The wire bond shear test is destructive. It is appropriate for use in process development, process control, or quality assurance, or both. This test method can be used on ultrasonic (wedge) bonds, however its use has not been shown to be a consistent indicator of bond integrity. See Annex B for information on performing shear testing on wedge bonds. This test method does not include bond strength testing using wire bond pull testing. Wire bond pull testing is described in IEC 60749-22-1. This first edition, together with the first edition of IEC 60749-22-1, cancels and replaces the first edition IEC 60749-22 published in 2002. This International Standard is to be used in conjunction with IEC 60749-22-1:2025. This edition includes the following significant technical changes with respect to the previous edition: a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749‑22‑1).
- Standard38 pagesEnglish languagee-Library read for1 day
IEC 62047-4:2026 describes generic specifications for micro-electromechanical systems (MEMS) made by semiconductors, which are the basis for specifications given in other parts of this series for various types of MEMS applications such as sensors, RF MEMS, optical MEMS, bio-MEMS, micro TAS, and power MEMS. This document specifies general procedures for quality assessment and establishes general principles for describing and testing of electrical, optical, mechanical and environmental characteristics. This part of IEC 62047 aids in the preparation of standards that define devices and systems made by micromachining technology, including but not limited to, material characterization and handling, assembly and testing, process control and measuring methods. MEMS described in this document are basically made of semiconductor material. However, the statements made in this document are also applicable to MEMS using materials other than semiconductor, for example, polymers, glass, metals and ceramic materials.
This edition includes the following significant technical changes with respect to the previous edition:
a) in the Scope, optical MEMS, bio-MEMS, micro TAS, and power MEMS for various types of MEMS applications were included;
b) MEMS categories and terms in Table 1 were slightly modified such consumer electronics and automotive were added that in application technology.
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IEC 60749-26:2025 establishes the procedure for testing, evaluating, and classifying components and microcircuits in accordance with their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The purpose of this document is to establish a test method that will replicate HBM failures and provide reliable, repeatable HBM ESD test results from tester to tester, regardless of component type. Repeatable data will allow accurate classifications and comparisons of HBM ESD sensitivity levels. ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC 60749‑27) or other ESD test methods in the IEC 60749 series. Unless otherwise specified, this test method is the one selected.
This edition includes the following significant technical changes with respect to the previous edition:
a) new definitions have been added;
b) text has been added to clarify the designation of and allowances resulting from “low parasitics”. The new designation includes the maximum number of pins of a device that can pass the test procedure.
- Standard50 pagesEnglish languagesale 15% off
- Standard171 pagesEnglish languagesale 15% off
- Standard55 pagesFrench languagesale 15% off
- Standard105 pagesEnglish and French languagesale 15% off
IEC 60749-21:2025 establishes a standard procedure for determining the solderability of device package terminations that are intended to be joined to another surface using tin-lead (SnPb) or lead-free (Pb-free) solder for the attachment. This test method provides a procedure for “dip and look” solderability testing of through hole, axial and surface mount devices (SMDs) as well as an optional procedure for a board mounting solderability test for SMDs for the purpose of allowing simulation of the soldering process to be used in the device application. The test method also provides optional conditions for ageing. This test is considered destructive unless otherwise detailed in the relevant specification.
NOTE 1 This test method does not assess the effect of thermal stresses which can occur during the soldering process. More details can be found in IEC 60749‑15 or IEC 60749‑20.
NOTE 2 If a qualitative test method is preferred, the Wetting balance test method can be found in IEC 60068-2-69.
This edition includes the following significant technical changes with respect to the previous edition:
- revision to certain operating conditions in line with current working practices.
- Standard20 pagesEnglish languagesale 15% off
- Standard61 pagesEnglish languagesale 15% off
- Standard21 pagesFrench languagesale 15% off
- Standard41 pagesEnglish and French languagesale 15% off
IEC 60749-23:2025 specifies the test used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", can be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this document.
This edition includes the following significant technical changes with respect to the previous edition:
a) absolute stress test definitions and resultant test durations have been updated.
- Standard9 pagesEnglish languagesale 15% off
- Standard29 pagesEnglish languagesale 15% off
- Standard10 pagesFrench languagesale 15% off
- Standard19 pagesEnglish and French languagesale 15% off
IEC 60749-7:2025 specifies the testing and measurement of water vapour and other gas content of the atmosphere inside a metal or ceramic hermetically sealed device. The test is used as a measure of the quality of the sealing process and to provide information about the long-term chemical stability of the atmosphere inside the package. It is applicable to semiconductor devices sealed in such a manner but generally only used for high reliability applications such as military or aerospace.
Of particular interest is the measurement of the primary sealing gases (or lack thereof), the moisture content, the presence of bombing gases that are indicative of non-hermeticity (e.g. helium), oxygen to argon ratio indicative of room air ~ 20 to 1 (± 10 %), dissimilar concentration of internally sealed gases (e.g. nitrogen, helium) than originally sealed in the device package, the presence of leak test fluid (i.e. fluorocarbon, helium, air), and all other gases to determine if the device meets the specified moisture, hermeticity and other criteria. Also of interest is the measurement of all the other gases since they reflect upon the quality of the sealing process and provide information about the long-term chemical stability of the atmosphere inside the device. The presence of leak test fluorocarbon vapour in the internal gas analysis (IGA) is an indication of failure to meet leak test requirements of IEC 60749‑8.
This test is destructive.
This edition includes the following significant technical changes with respect to the previous edition:
a) This document has been re-written and rearranged to align with the text of MIL-STD-883, Method 1018.10.
b) Additional detail has been provided in the calibration requirements.
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IEC 60749-24:2025 specifies unbiased highly accelerated stress testing (HAST). HAST is performed for the purpose of evaluating the reliability of non-hermetically packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under non-condensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it. Bias is not applied in this test to ensure that the failure mechanisms potentially overshadowed by bias can be uncovered (e.g. galvanic corrosion).
This test is used to identify failure mechanisms internal to the package and is destructive.
This edition includes the following significant technical changes with respect to the previous edition:
a) rearrangement of clauses to reposition requirements;
b) addition of two notes to the post-test electrical procedures.
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IEC 60749-22-2:2025 establishes a means for determining the strength of a ball bond to a die or package bonding surface and can be performed on pre-encapsulation or post-encapsulation devices. This measure of bond strength is extremely important in determining two features:
a) the integrity of the metallurgical bond which has been formed, and
b) the quality of ball bonds to die or package bonding surfaces.
This test method covers thermosonic (ball) bonds made with small diameter wire from 15 µm to 76 µm (0,000 6" to 0,003").
This test method can only be used when the bonds are large enough to allow for proper contact with the shear test chisel and when there are no adjacent interfering structures that would hinder the movement of the chisel. For consistent shear results the ball height will be at least 4,0 µm (0,000 6 ") for ball bonds, which is the current state of the art for bond shear test equipment at the time of this revision.
This test method can also be used on ball bonds that have had their wire removed and on to which a second bond wire (typically a stitch bond) is placed. This is known as "stitch on ball" and "reverse bonding". See Annex A for additional information.
The wire bond shear test is destructive. It is appropriate for use in process development, process control, or quality assurance, or both.
This test method can be used on ultrasonic (wedge) bonds, however its use has not been shown to be a consistent indicator of bond integrity. See Annex B for information on performing shear testing on wedge bonds.
This test method does not include bond strength testing using wire bond pull testing. Wire bond pull testing is described in IEC 60749-22-1.
This first edition, together with the first edition of IEC 60749-22-1, cancels and replaces the first edition IEC 60749-22 published in 2002. This International Standard is to be used in conjunction with IEC 60749-22-1:2025.
This edition includes the following significant technical changes with respect to the previous edition:
a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749‑22‑1).
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IEC 60749-22-1:2025 provides a means for determining the strength and failure mode of a wire bonded to, and the corresponding interconnects on, a die or package bonding surface and can be performed on unencapsulated or decapsulated devices. This test method can be performed on gold alloy, copper alloy, and silver alloy thermosonic (ball and stitch) bonds made of wire ranging in diameter from 15 µm to 76 µm (0,000 6" to 0,003"); and on gold alloy, copper alloy, and aluminium alloy ultrasonic (wedge) bonds made of wire ranging in diameter from 18 µm to 600 µm (0,000 7" to 0,024").
This wire bond pull test method is destructive. It is appropriate for use in process development, process control, or quality assurance.
This test method allows for two distinct methods of pulling wires:
a) One method incorporates the use of a hook that is placed under the wire and is then pulled.
b) One method requires that after the wire be cut, a clamp is placed on the wire connected to the bond to be tested, and this clamp is used to pull the wire.
This test method does not include bond strength testing using wire bond shear testing. Wire bond shear testing is described in IEC 60749-22-2.
This first edition, together with the first edition of IEC 60749-22-2:2025, cancels and replaces the first edition of IEC 60749-22 published in 2002.
This edition includes the following significant technical changes with respect to the previous edition:
a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749-22-2).
This International Standard is to be used in conjunction with IEC 60749-22-2:2025.
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IEC 62047-49:2025 specifies reliability test methods of electro-mechanical conversion characteristics of piezoelectric thin film on microcantilever, which is typical structure of micro sensors and micro actuators. In order to estimate the stability of the piezoelectric coefficient of the piezoelectric thin films with microscale structures in the operating conditions, this document reports the schema to determine the characteristic parameters for consumer, industry or any other applications of piezoelectric MEMS devices. This document applies to piezoelectric thin films on microcantilever fabricated by MEMS process.
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IEC 63150-2:2025 specifies terms and definitions, and test methods that can be used to evaluate and determine the performance characteristics of kinetic energy harvesting devices for human arm swing motion. Such kinetic energy harvesting devices often have a rotor with eccentric mass to efficiently capture kinetic energy at very low frequency range, but this document is not limited to rotational energy harvesters. These have different power generation mechanisms (such as electromagnetic, piezoelectric, electrostatic, triboelectric, etc.) with different working principles, and their performance is evaluated with motions relevant to human arm swing, in which large-amplitude low-frequency external mechanical excitations prevail.
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IEC 63150-3:2025 specifies terms and definitions, and test methods of impact-driven energy harvesting devices of which electric energy is generated by impact force of human walking or running motion under practical human motion. This document is applicable to impact-driven energy harvesting devices embedded in wearables, especially, shoe-mounted energy harvesters, whose main element of the power generation is the impact energy. This measuring method is independent of power generation principles (such as piezoelectric, electrostatic, triboelectric, electromagnetic, etc.). According to typical human motion, power generation performance is measured in the condition of large-amplitude and low-frequency external mechanical excitation.
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IEC 62047-53:2025 defines the test methods for the performances of MEMS electrothermal transfer device.
The document is applicable to the MEMS electrothermal transfer devices used in airbags, petroleum and mineral detection, igniters and detonators.
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IEC 62007-2:2025 specifies measuring methods for characterizing semiconductor optoelectronic devices that are used in the field of fibre optic digital communication systems and subsystems. This third edition cancels and replaces the second edition published in 2009. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition:
a) Modification of the definition of “optical fibre pigtail” in 3.1.3;
b) Correction of an error in Formula (1) for relative intensity noise;
c) Correction of an error in Formula (5);
d) Correction of errors in the title of Figure 11 and the text of 4.9 (replaced "LD" with "LED");
e) Clarification of how to calculate the 1 dB compression in 4.9;
f) Corrections of the circuit diagrams in Figure 2, Figure 5, Figure 11, Figure 17, Figure 18, Figure 19, Figure 20, and Figure 21;
g) Clarification of the measurement setup in 5.10 (Figure 28).
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IEC 60747-6:2025 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics (properties), measuring and test methods, requirements for type tests, routine tests, endurance tests and marking for the following discrete semiconductor devices:
- reverse blocking triode thyristors;
- reverse conducting (triode) thyristors;
- bidirectional triode thyristors (triacs);
- turn-off thyristors.
If no ambiguity is likely to result, any of the above will be referred to as thyristors.
This edition includes the following significant technical changes with respect to the previous edition:
a) the terms and definitions for partial thermal resistance junction-to-case and voltages related to ratings and characteristics (properties) have been added;
b) Clauses 3, 4, 5, 6 and 7 were amended with some deletions of information no longer in use and with some necessary additions.
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IEC 60747-2:2025 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics (properties), measuring and test methods, requirements for type tests, routine tests, endurance tests and marking for the following discrete semiconductor devices:
- generic rectifier diodes;
- avalanche rectifier diodes;
- fast-switching rectifier diodes;
- Schottky barrier diodes.
If no ambiguity is likely to result, any of the above will be referred to as diodes.
This edition includes the following significant technical changes with respect to the previous edition:
a) the terms and definitions for partial thermal resistance junction-to-case have been added;
b) Clauses 3, 4, 5, 6 and 7 have been amended with some deletions of information no longer in use and with some necessary additions.
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IEC 62007-2:2025 specifies measuring methods for characterizing semiconductor optoelectronic devices that are used in the field of fibre optic digital communication systems and subsystems. This third edition cancels and replaces the second edition published in 2009. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: a) Modification of the definition of “optical fibre pigtail” in 3.1.3; b) Correction of an error in Formula (1) for relative intensity noise; c) Correction of an error in Formula (5); d) Correction of errors in the title of Figure 11 and the text of 4.9 (replaced "LD" with "LED"); e) Clarification of how to calculate the 1 dB compression in 4.9; f) Corrections of the circuit diagrams in Figure 2, Figure 5, Figure 11, Figure 17, Figure 18, Figure 19, Figure 20, and Figure 21; g) Clarification of the measurement setup in 5.10 (Figure 28).
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IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor.
If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document.
This test caused wear-out and is considered destructive.
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IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor. If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document. This test caused wear-out and is considered destructive.
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IEC 63378-3:2025 specifies the thermal circuit network model of discrete (TO‑243, TO‑252 and TO‑263) packages, which is used in the transient analysis of electronic devices to estimate precise junction temperatures without experimental verification.
This model is intended to be made and provided by semiconductor suppliers and to be used by assembly makers of electronic devices.
- Standard17 pagesEnglish languagee-Library read for1 day
IEC 62007-2:2025 specifies measuring methods for characterizing semiconductor optoelectronic devices that are used in the field of fibre optic digital communication systems and subsystems. This third edition cancels and replaces the second edition published in 2009. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition:
a) Modification of the definition of “optical fibre pigtail” in 3.1.3;
b) Correction of an error in Formula (1) for relative intensity noise;
c) Correction of an error in Formula (5);
d) Correction of errors in the title of Figure 11 and the text of 4.9 (replaced "LD" with "LED");
e) Clarification of how to calculate the 1 dB compression in 4.9;
f) Corrections of the circuit diagrams in Figure 2, Figure 5, Figure 11, Figure 17, Figure 18, Figure 19, Figure 20, and Figure 21;
g) Clarification of the measurement setup in 5.10 (Figure 28).
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IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor.
If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document.
This test caused wear-out and is considered destructive.
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IEC 63378-3:2025 specifies the thermal circuit network model of discrete (TO‑243, TO‑252 and TO‑263) packages, which is used in the transient analysis of electronic devices to estimate precise junction temperatures without experimental verification. This model is intended to be made and provided by semiconductor suppliers and to be used by assembly makers of electronic devices.
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IEC TR 63571:2025 describes a method to calculate “SYSTEM”-level lifetime from “PART”-level lifetime. It presents a general mathematical theory and simple calculation examples for educational purposes. Of the elements related to “SYSTEM”-level lifetime, software-related elements such as diagnostics are outside the scope of this document.
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IEC 63378-3:2025 specifies the thermal circuit network model of discrete (TO‑243, TO‑252 and TO‑263) packages, which is used in the transient analysis of electronic devices to estimate precise junction temperatures without experimental verification.
This model is intended to be made and provided by semiconductor suppliers and to be used by assembly makers of electronic devices.
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