SIST EN IEC 60749-22-2:2026

SLOVENSKI STANDARD
01-marec-2026
Nadomešča:
SIST EN 60749-22:2004
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 22-2.
del: Moč vezi - Preskusne metode za strižno vezavo žice (IEC 60749-22-2:2025)
Semiconductor devices - Mechanical and climatic test methods - Part 22-2: Bond
strength - Wire bond shear test methods (IEC 60749-22-2:2025)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren –Teil 22:
Kontaktfestigkeit - Drahtbond-Scherprüfverfahren (IEC 60749-22-2:2025)
Dispositifs à semiconducteurs - Méthodes d’essais mécaniques et climatiques - Partie 22
-2: Robustesse des contacts soudés - Méthodes d’essais de cisaillement des contacts
soudés par fil (IEC 60749-22-2:2025)
Ta slovenski standard je istoveten z: EN IEC 60749-22-2:2026
ICS:
19.020 Preskuševalni pogoji in Test conditions and
postopki na splošno procedures in general
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD EN IEC 60749-22-2

NORME EUROPÉENNE
EUROPÄISCHE NORM January 2026
ICS 31.080.01 Supersedes EN 60749-22:2003 (partially)
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 22-2: Bond strength - Wire bond shear test methods
(IEC 60749-22-2:2025)
Dispositifs à semiconducteurs - Méthodes d'essais Halbleiterbauelemente - Mechanische und klimatische
mécaniques et climatiques - Partie 22-2: Robustesse des Prüfverfahren - Teil 22: Kontaktfestigkeit - Drahtbond-
contacts soudés - Méthodes d'essais de cisaillement des Scherprüfverfahren
contacts soudés par fil (IEC 60749-22-2:2025)
(IEC 60749-22-2:2025)
This European Standard was approved by CENELEC on 2025-12-31. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the
Netherlands, Norway, Poland, Portugal, Republic of North Macedonia, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Türkiye and the United Kingdom.

European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2026 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN IEC 60749-22-2:2026 E

European foreword
The text of document 47/2959/FDIS, future edition 1 of IEC 60749-22-2, prepared by TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN IEC 60749-22-2:2026.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2027-01-31
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2029-01-31
document have to be withdrawn
This document, together with EN IEC 60749-22-1:2026, supersedes EN 60749-22:2003.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
This document is read in conjunction with EN IEC 60749-22-1:2026.
Any feedback and questions on this document should be directed to the users’ national committee. A
complete listing of these bodies can be found on the CENELEC website.
Endorsement notice
The text of the International Standard IEC 60749-22-2:2025 was approved by CENELEC as a
European Standard without any modification.
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any amendments)
applies.
NOTE 1  Where an International Publication has been modified by common modifications, indicated by (mod),
the relevant EN/HD applies.
NOTE 2  Up-to-date information on the latest versions of the European Standards listed in this annex is available
here: www.cencenelec.eu.
Publication Year Title EN/HD Year
IEC 60749-22-1 - Semiconductor devices - Mechanical and - -
climatic test methods - Part 22-1: Bond
strength - Wire bond pull test methods

IEC 60749-22-2 ®
Edition 1.0 2025-11
INTERNATIONAL
STANDARD
Semiconductor devices - Mechanical and climatic test methods -
Part 22-2: Bond strength - Wire bond shear test methods
ICS 31.080.01  ISBN 978-2-8327-0882-8

IEC 60749-22-2:2025-11(en)
IEC 60749-22-2:2025 © IEC 2025
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
3.1 Terms and defintions. 7
3.2 Terms and definitions applicable to Annex B. 8
4 Apparatus and material required . 8
4.1 Inspection equipment . 8
4.2 Measurement equipment . 8
4.3 Workholder . 9
4.4 Bond shear equipment . 9
4.5 Bond shear chisel tool setup . 9
5 Procedure . 9
5.1 Calibration . 9
5.2 Visual examination of bonds to be tested after decapsulation . 10
5.2.1 Usage of visual examination. 10
5.2.2 Bond pad examination and acceptability criteria for both Al and Cu bond
pad metallization . 10
5.2.3 Copper bond and Cu wire examination and acceptability criteria . 10
5.3 Measurement of the ball bond diameter to determine the ball bond shear
failure criteria . 10
5.4 Performing the bond shear test . 11
5.5 Examination of sheared bonds . 12
5.6 Bond shear codes for ball bonds . 12
5.6.1 General. 12
5.6.2 Type 1 – Bond lift . 16
5.6.3 Type 2 – Bond shear . 17
5.6.4 Type 3 – Cratering . 19
5.6.5 Type 4 – arm contacts specimen (bonding surface contact) . 21
5.6.6 Type 5 – shearing skip . 21
5.6.7 Type 6 – Bond pad (or bonding surface) lift . 21
5.7 Bond shear data . 22
6 Summary . 22
Annex A (informative) Performing this test method on "stitch on ball" bonds . 23
Annex B (informative) Performing this test method on ultrasonic wedge bonds. 25
B.1 General . 25
B.2 Additions and modifications of the main text . 25
B.2.1 Addition to Clause 1 . 25
B.2.2 Addition to Clause 3 . 25
B.2.3 Replacement of 4.4 . 25
B.2.4 Replacement of 5.4 . 26
B.2.5 Replacement of 5.5 . 26
B.2.6 Additional text to 5.6 . 26
B.2.7 Replacement of Clause 6 . 26
Annex C (informative) Performing shear testing when a tool cannot reach below bond
centreline . 27
IEC 60749-22-2:2025 © IEC 2025
Annex D (informative) Concerns with decapsulation processes for devices with copper
wirebonds . 29
Annex E (informative) Bond contact area – Valid method for comparing shear force . 32
Bibliography . 34

Figure 1 – Bond shear set-up for bond on die bonding pad . 7
Figure 2 – Proper height placement of shear tool with respect to ball centre line . 9
Figure 3 – Ball bond measurement: side view and top view (for symmetrical versus
asymmetrical) . 11
Figure 4 – Type 1: Bond lift – Gold aluminium . 12
Figure 5 – Type 1: Bond lift – Copper/aluminium, copper/copper and gold/gold . 12
Figure 6 – Type 1: Bond lift – All metal systems on leadframe or substrate . 13
Figure 7 – Type 2: Bond shear – All metal systems – Variation A – Separation within
bonding surface metalization . 13
Figure 8 – Type 2: Bond shear – Gold/aluminium – Variation B – Separation wholly
within intermetallic layer . 13
Figure 9 – Type 2: Bond shear – All metal systems and surfaces, except
Gold/aluminium – Variation B – Separation at bonding surface . 14
Figure 10 – Type 2: Bond shear – All metal systems and bonding surfaces –
Variation C – Separation at material interface and within bulk material . 14
Figure 11 – Type 2: Bond shear – All metal systems – Variation D – Separation within
ball bond . 14
Figure 12 – Type 2: Bond shear – All metal systems on leadframe or substrate –
Variation D – Separation within ball bond . 15
Figure 13 – Type 3: Cratering . 15
Figure 14 – Type 4: Bonding surface contact . 15
Figure 15 – Type 5: Shearing skip . 16
Figure 16 – Type 6: Bonding pad surface lift . 16
Figure 17 – Type 6: Leadframe or substrate bond pad or bonding surface
metalization lift . 16
Figure 18 – Imprints on Al pad from lifted bonds with no evidence of shearing (Type 1) . 17
Figure 19 – Shear of aluminium pad (with copper wire) (Type 2 – Variation A) . 18
Figure 20 – Shear wholly within gold/aluminium intermetallic layer (Type 2 –
Variation B) . 18
Figure 21 – Shear in bulk copper ball bond and at material interface (Type 2 –
Variation C) . 19
Figure 22 – Shear wholly within gold ball bond (Type 2 – Variation D) . 19
Figure 23 – Shear wholly within Cu ball bond (Type 2 – Variation D) . 19
Figure 24 – Bond pad cratering after shear test . 20
Figure 25 – Bond pad cratering (pad and ball view) and validation of crack and thin Al
on another pad . 20
Figure 26 – Images of shear tool contacting the bonding surface (shear tool set
too low) . 21
Figure 27 – Images of shearing skip (shear tool set too high) . 21
Figure 28 – Images of bonding surface lifting . 22
Figure A.1 – Top view of "stitch on ball" bond . 23
Figure A.2 – Side view of "stitch on ball" bond . 23
IEC 60749-22-2:2025 © IEC 2025
Figure A.3 – Die to die bonding . 24
Figure A.4 – "Reverse" bond, with ball on leadframe . 24
Figure C.1 – Passivation preventing proper height placement of shear tool. 27
Figure C.2 – Remnant due to shear tool placement above centreline . 27
Figure C.3 – Views of excessive Al splash . 28
Figure D.1 – Images of copper ball bonds showing severe damage from etching
process . 29
Figure D.2 – Comparison images showing degree of Cu attack due to two different
etchants . 29
Figure D.3 – Stitch bond after decapsulation using laser ablation . 30
Figure D.4 – Die and wirebonds decapsulated using laser ablation . 31
Figure E.1 – Sample cross section of a copper wire bond . 32
Figure E.2 – Image analysis of pixel distribution within the fitted circle (represents ball) . 33
Figure E.3 – Images of "optical versus SEM" correlation study . 33

IEC 60749-22-2:2025 © IEC 2025
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
Semiconductor devices - Mechanical and climatic test methods -
Part 22-2: Bond strength - Wire bond shear test methods

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and
in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports,
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preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with
may participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for
Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence between
any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) IEC draws attention to the possibility that the implementation of this document may involve the use of (a)
patent(s). IEC takes no position concerning the evidence, validity or applicability of any claimed patent rights in
respect thereof. As of the date of publication of this document, IEC had not received notice of (a) patent(s), which
may be required to implement this document. However, implementers are cautioned that this may not represent
the latest information, which may be obtained from the patent database available at https://patents.iec.ch. IEC
shall not be held responsible for identifying any or all such patent rights.
IEC 60749-22-2 has been prepared by IEC technical committee 47: Semiconductor devices.
It is an International Standard.
This International Standard is to be used in conjunction with IEC 60749-22-1:2025.
This first edition, together with the first edition of IEC 60749-22-1, cancels and replaces the first
edition IEC 60749-22 published in 2002. It is based on JEDEC document JESD22-B120. lt is
used with permission of the copyright holder, JEDEC Solid State Technology Association.
This edition includes the following significant technical changes with respect to the previous
edition:
a) Major update, including new techniques and use of new materials (e.g. copper wire)
involving a complete rewrite as two separate subparts (this document and IEC 60749-22-1).
IEC 60749-22-2:2025 © IEC 2025
The text of this International Standard is based on the following documents:
Draft Report on voting
47/2959/FDIS 47/2981/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 60749 series, published under the general title Semiconductor
devices - Mechanical and climatic test methods, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
– reconfirmed,
– withdrawn, or
– revised.
IEC 60749-22-2:2025 © IEC 2025
1 Scope
This part of IEC 60749 establishes a means for determining the strength of a ball bond to a die
or package bonding surface and can be performed on pre-encapsulation or post-encapsulation
devices. This measure of bond strength is extremely important in determining two features:
a) the integrity of the metallurgical bond which has been formed, and
b) the quality of ball bonds to die or package bonding surfaces.
This test method covers thermosonic (ball) bonds made with small diameter wire from 15 µm to
76 µm (0,000 6" to 0,003").
This test method can only be used when the bonds are large enough to allow for proper contact
with the shear test chisel and when there are no adjacent interfering structures that would hinder
the movement of the chisel. For consistent shear results the ball height will be at least 4,0 µm
(0,000 6 ") for ball bonds, which is the current state of the art for bond shear test equipment at
the time of this revision.
This test method can also be used on ball bonds that have had their wire removed and on to
which a second bond wire (typically a stitch bond) is placed. This is known as "stitch on ball"
and "reverse bonding". See Annex A for additional information.
The wire bond shear test is destructive. It is appropriate for use in process development,
process control, or quality assurance, or both.
This test method can be used on ultrasonic (wedge) bonds, however its use has not been shown
to be a consistent indicator of bond integrity. See Annex B for information on performing shear
testing on wedge bonds.
This test method does not include bond strength testing using wire bond pull testing. Wire bond
pull testing is described in IEC 60749-22-1.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60749-22-1, Semiconductor devices - Mechanical and climatic test methods - Part 22-1:
Bond strength testing - Wire bond pull test methods
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminology databases for use in standardization at the following
addresses:
– IEC Electropedia: available at https://www.electropedia.org/
– ISO Online browsing platform: available at https://www.iso.org/obp
IEC 60749-22-2:2025 © IEC 2025
3.1 Terms and defintions
3.1.1
ball bond
first bond during the thermosonic (ball) bonding process, in which the end of a small diameter
wire (typically gold, copper, or silver) is bonded to a die bonding surface (typically an aluminium
alloy die pad metallization)
Note 1 to entry: The ball bond includes the enlarged spherical or nail-head portion of the wire that is provided by
the electronic flame-off, the underlying bonding pad, and the metallurgical weld interface between the ball bond and
the bonding pad.
3.1.2
bonding surface
surface to which the wire is bonded, which can be any one of the following: 1) the die pad
metallization or die surface metallization (e.g., MOSFET), 2) the package surface metallization
(e.g. leadframe, substrate, post), 3) a bump (see also "reverse bond" and "bump"), or 4) a
bonded stitch on die pad/flag or package surface metallization (see also "security bond" and
"security loop")
3.1.3
bond shear
process in which an instrument uses a chisel-shaped tool to shear or push a ball bond off the
bonding surface
Note 1 to entry: The force required to cause this separation is recorded and is referred to as the bond shear force.
The bond shear force of a ball bond, when correlated to the diameter of the ball bond, is an indicator of the quality
of the metallurgical bond between the ball bond and the bonding surface metallization.
SEE: Figure 1.
NOTE Similar setup for bonds on other bonding surfaces, such as package substrate/leadframe.
Figure 1 – Bond shear set-up for bond on die bonding pad
3.1.4
shear tool
shear arm
chisel (made of tungsten carbide or an equivalent material with similar mechanical properties)
with specific angles on the bottom and back of the tool to ensure a shearing action
IEC 60749-22-2:2025 © IEC 2025
3.1.5
stitch bond
second bond during the thermosonic (ball) bonding process, in which the wire is typically
bonded to the package bonding surface (e.g. leadframe, substrate, post, etc.)
Note 1 to entry: A stitch bond is also be referred to as a crescent bond.
Note 2 to entry: For some unique constructions (e.g., reverse bond), the second bond can be formed on top of a
bump. See also "reverse bond" and "bump".
3.1.6
wedge bond
attachment of a wire (typically aluminium, copper, or gold) or an aluminium ribbon to a die
bonding surface (typically aluminium pad metallization) or the package bonding surface (usually
a plated leadframe post or finger) using an ultrasonic bonding process
Note 1 to entry: See Annex B for information on performing shear testing on wedge bonds.
3.2 Terms and definitions applicable to Annex B
3.2.1
bonding surface
either 1) die pad metallization or 2) package surface metallization to which the wire is wedge
bonded
3.2.2
bond shear
process in which an instrument uses a chisel-shaped tool to shear or push a wedge bond off
the bond pad
Note 1 to entry: The bond shear force of a wedge bond, when compared to the manufacturer's tensile strength of
the wire, is an indicator of the integrity of the weld between the wire and the bond pad or package surface
metallization.
3.2.3
bond footprint
area of the wire that has a physical bond interface (intermetallic or
recrystallized) with respect to the compressed area of the wire
Note 1 to entry: The wedge bond includes the compressed (ultrasonically bonded) area of the wire and the
underlying bonding surface. When bonding aluminium wire to an aluminium alloy die bond pad, or bonding copper
wire to a copper alloy leadframe there is no wedge bond-bond pad intermetallic because the two materials are of the
same composition, but the two materials are recrystallized together by the ultrasonic energy of the welding process.
4 Apparatus and material required
4.1 Inspection equipment
An optical microscope system or scanning electron microscope providing a minimum of 70X
magnification. A higher magnification can be necessary for 15 µm (0,000 6") diameter wire.
4.2 Measurement equipment
An optical microscope/measurement system capable of measuring the bond diameter to within
±2,54 µm (0,000 1").
IEC 60749-22-2:2025 © IEC 2025
4.3 Workholder
A fixture used to hold the part being tested parallel to the shearing plane and perpendicular to
the shear tool. The fixture shall also eliminate part movement during bond shear testing. If using
a calliper controlled workholder, place the holder so that the shear motion is against the positive
stop of the calliper. This is to ensure that the recoil movement of the calliper controlled
workholder does not influence the bond shear test.
4.4 Bond shear equipment
The bond shear equipment shall be capable of repeatable, precision placement of the shearing
tool with respect to the ball height and the bonding surface. The specified distance (h) above
the topmost part of the bonding surface (e.g. passivation layer on IC, solder mask on organic
substrate) shall ensure the shear tool does not contact the bonding surface (e.g. top passivation
or polyimide layer, solder mask) and shall be less than the distance from the topmost part of
the bonding surface to the centre line (CL) of the ball bond (see Figure 2). See Annex C for
guidance when the passivation, or other structures on the die surface and excessive Al splash
prevent the shear tool from contacting the ball below the centre line.

Figure 2 – Proper height placement of shear tool with respect to ball centre line
4.5 Bond shear chisel tool setup
When choosing the proper chisel for the bond being sheared items to consider include, but are
not limited to, flat shear face, sharp shearing edge, shearing width of a minimum of 1,2X the
bond diameter, and bond length. The sample and chisel face should be clean and free of chips
or other defects that will interfere with the shearing test.
Bonds should also be examined to determine if adjacent interfering structures are far enough
away to allow suitable placement and clearance (above the bonding surface and between
adjacent bonds) for the shear test tool.
5 Procedure
5.1 Calibration
Before performing the bond shear test, it shall be determined that the equipment has been
calibrated in accordance with the manufacturer's specifications and is presently in calibration.
Recalibration is required if the equipment is moved to another location.
IEC 60749-22-2:2025 © IEC 2025
5.2 Visual examination of bonds to be tested after decapsulation
5.2.1 Usage of visual examination
In addition to being a manufacturing process monitor, this test method can also be used to
assess the bond strength of encapsulated devices after soldering operations or after reliability
stress testing. To do this, the encapsulation material should be removed in a manner that does
not significantly degrade the wire, the bond, the bonding interface, or the bonding surface.
Shear force values are often lower for bonds that have been decapsulated, and therefore cannot
be compared to values for similar, unencapsulated bonds. If the decapsulation process is well
controlled and repeatable, which is the case for gold wire, then this test method can be used
for lot-to-lot comparison; however, it can be hard to consistently control the decapsulation
process for copper wires to ensure the accuracy of the results. For Cu wires, the effectiveness
of etch has been seen to vary due to the encapsulation material and the level of reliability stress
testing performed on the samples. See Annex D for additional information regarding the
decapsulation process of devices with Cu wire bonds.
Bonds shall also be examined to determine that enough encapsulation material has been
removed to allow suitable placement and clearance (above the bonding surface and between
adjacent bonds) for the shear test tool.
5.2.2 Bond pad examination and acceptability criteria for both Al and Cu bond pad
metallization
If performing bond shear testing on a device which has been opened using wet chemical or dry
etch techniques, the bond pads shall be examined to ensure there is no absence of metallization
on the bonding surface area due to chemical etching, and wire bonds are attached to the
bonding surface. Those bonds on Al or Cu bond pads with significant chemical attack or
absence of metallization shall not be used for ball shear testing. The shear results for any
damaged bonds found during post shear inspection can also be excluded. It is possible that
wire bonds on bonding surfaces without degradation from chemical attack will not be attached
to the bonding surface due to other causes (e.g. package stress). These wire bonds are
considered valid and shall be included in the shear data as a zero (0) shear force value.
5.2.3 Copper bond and Cu wire examination and acceptability criteria
If performing bond shear testing on a part with copper wires, the Cu bond and Cu wire shall be
examined before or after the shear test to ensure there is no significant loss of metal or other
damage due to decapsulation process that might affect the results of the shear test. The shear
result can be excluded for a Cu bond or Cu wire with significant chemical attack or other damage
due to the decapsulation process.
Annex D provides additional information to assess what level of damage is acceptable.
5.3 Measurement of the ball bond diameter to determine the ball bond shear failure
criteria
Once the bonding surfaces have been examined and before performing bond shear testing, the
diameter of all ball bonds to be tested shall be measured and recorded. The ball is measured
at the widest point of the ball bond. For symmetrical ball bonds (those basically round) only one
measurement per bond shall be taken.
For asymmetrical bonds, determine the average diameter using both the largest (d ) and the
large
smallest (d ) diameter values (see Figure 3). These two ball bond diameter measurements
small
shall be used to determine the mean, or average, diameter value. The resulting mean, or
average, ball bond diameter shall then be used to establish the failure criteria as defined in
bond shear qualification standards.
IEC 60749-22-2:2025 © IEC 2025

Figure 3 – Ball bond measurement: side view and top view
(for symmetrical versus asymmetrical)
To determine whether the sheared bond has passed the acceptability criteria that is stated in
JESD47, the shear force shall be divided by the ball bond area. The formula for area is:
(1)
A πr π d /4
( )
where d is the above measured diameter (or mean diameter for an asymmetrical ball bond) for
the bond being sheared.
To facilitate faster testing a statistically representative ball bond diameter can be used with all
of the bonds sheared within a sample when calculating the shear force per unit area for each
bond sheared (in lieu of using the corresponding ball diameter for each ball sheared to calculate
its shear force per unit area value).
5.4 Performing the bond shear test
The bond shear equipment shall pass all self-diagnostic tests before beginning the test. The
bond shear equipment and test area shall be free of excessive vibration or movement. Examine
the shear tool to verify it is in good condition and is not bent or damaged. Check the shear tool
to verify it is in the up position.
Adjust the workholder to match the part being tested. Secure the part to the workholder. Make
sure the surface of the die is parallel to the shearing plane of the shear tool. It is important that
the shear tool does not contact the surface of the die or adjacent structures during the shearing
operation as this will give incorrect high readings.
Position the part so that the bond to be tested is located adjacent to the shear tool. Lower the
shear tool, or raise the part depending upon shear equipment used, to approximately the height
from which the bond is to be sheared but not contacting the surface. (See Figure 2, distance
"h").
Position the ball bond to be tested so that the shear motion will travel perpendicular to the
surface edge. Position the shear tool within approximately the diameter of one ball of the bond
to be shear tested and shear the bond.
Historical data shows that variation in shear speed can have a slight effect on the shear results
for gold ball bonds. If test results from different wire bonding lots are to be compared any
variation in test speed shall be taken into account.
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IEC 60749-22-2:2025 © IEC 2025
5.5 Examination of sheared bonds
All bonds shall be sheared in a planned or defined sequence so that later visual examination
can determine which shear values should be eliminated because of an improper shear. The
bonds shall be examined in accordance with the codes in 5.6 using at least 70X magnification
to determine if the shear tool skipped over the bond (type 5) or the tool scraped or ploughed
into the surface of the die (type 4). Type 4 and type 5 defective shear conditions are invalid and
shall be eliminated from the shear data (see Figure 4).
Sheared bonds in which a type 3 cratering condition has occurred shall be investigated further
to determine whether the cracking or cratering is due to a preexisting condition in the silicon or
metallization under the bond pad prior to the bonding operation or was due to the act of bonding.
Cratering resulting from the bonding process shall be considered valid and included in the shear
data. Any bonds with a preexisting condition in the silicon or metallization under the bond pad
are invalid for this test method and shall not be included with the shear data. If a preexisting
condition in the silicon or metallization under the bond pad, or both, are found to cause
cratering, they shall be addressed.
5.6 Bond shear codes for ball bonds
5.6.1 General
The shear codes for ball bonds are given in Figure 4 to Figure 17.

Figure 4 – Type 1: Bond lift – Gold aluminium

Figure 5 – Type 1: Bond lift – Copper/aluminium, copper/copper and gold/gold
IEC 60749-22-2:2025 © IEC 2025

Figure 6 – Type 1: Bond lift – All metal systems on leadframe or substrate

Figure 7 – Type 2: Bond shear – All metal systems – Variation A –
Separation within bonding surface metalization

Figure 8 – Type 2: Bond shear – Gold/aluminium – Variation B –
Separation wholly within intermetallic layer
IEC 60749-22-2:2025 © IEC 2025

Figure 9 – Type 2: Bond shear – All metal systems and surfaces,
except Gold/aluminium – Variation B – Separation at bonding surface

Figure 10 – Type 2: Bond shear – All metal systems and bonding surfaces –
Variation C – Separation at material interface and within bulk material

Figure 11 – Type 2: Bond shear – All metal systems –
Variation D – Separation within ball bond
IEC 60749-22-2:2025 © IEC 2025

Figure 12 – Type 2: Bond shear – All metal systems on leadframe or substrate –
Variation D – Separation within ball bond

Figure 13 – Type 3: Cratering
Figure 14 – Type 4: Bonding surface contact
IEC 60749-22-2:2025 © IEC 2025

Figure 15 – Type 5: Shearing skip

Figure 16 – Type 6: Bonding pad surface lift

Figure 17 – Type 6: Leadframe or substrate bond pad
or bonding surface metalization lift
5.6.2 Type 1 – Bond lift
5.6.2.1 General
A separation of the entire wire bond from the bonding surface with only an imprint being left on
the bonding surface (see Figure 18).
NOTE A bond lift can require an assessment of the bonder settings and/or cleanliness or integrity of the bonding
surface.
IEC 60749-22-2:2025 © IEC 2025
5.6.2.2 Type 1 – Bond lift – Gold/aluminium
There is the additional requirement of very little evidence of intermetallic formation, welding, or
shearing of the bonding surface metallization to take into account.
5.6.2.3 Type 1 – Bond lift – Copper/aluminium, copper/copper, and gold/gold
There is the additional requirement of no visual evidence of shearing of the bonding surface
metallization to take into account.
NOTE 1 The copper/aluminium system forms a very thin intermetallic layer that is not generally visible. When the
bond wire and the bonding surface are the same material (e.g. copper/copper, gold/gold) no intermetallic is formed.
NOTE 2 Copper/copper includes the bonding of Cu ball bonds onto bond pad structures that have Cu metallization
with a barrier metal. The barrier metal can also include other thin layers to prevent oxidation of the barrier metal.
Some commonly used structures include Cu-NiPd and Cu-NiPdAu.
5.6.2.4 Type 1 – bond lift from leadframe/substrate:
There is the additional requirement of no visual evidence of disturbance of the bonding surface
metallization to take into account.

Figure 18 – Imprints on Al pad from lifted bonds with no evidence of shearing (Type 1)
5.6.3 Type 2 – Bond shear
5.6.3.1 Type 2 – Bond shear – Gold/aluminium
A separation of the wire bond with visual evidence of shearing of the bulk metal where:
a) a thin layer of the bonding surface metallization remains with the sheared wire bond and
there is visual shearing of the bonding surface meta
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